CSD18503KCS datasheet(1/8 Pages) TI

部件名	CSD18503KCS

功能描述	40-V, N-Channel NexFET Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

制造商	TI [Texas Instruments]

网页	http://www.ti.com

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VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 75A

TC = 125ºC Id = 75A

G001

0

2

4

6

8

10

0

5

10

15

20

25

30

Qg - Gate Charge (nC)

ID = 75A

VDS = 20V

G001

CSD18503KCS

www.ti.com

SLPS368 – SEPTEMBER 2012

40-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD18503KCS

1

FEATURES

PRODUCT SUMMARY

2

•

Ultra Low Qg and Qgd

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

VDS

Drain to Source Voltage

40

V

•

Avalanche Rated

Qg

Gate Charge Total (10V)

30

nC

Qgd

Gate Charge Gate to Drain

4.6

nC

•

Logic Level

VGS = 4.5V

5.4

m

Ω

•

Pb Free Terminal Plating

RDS(on)

Drain to Source On Resistance

VGS = 10V

3.6

m

Ω

•

RoHS Compliant

VGS(th)

Threshold Voltage

1.9

V

•

Halogen Free

•

TO-220 Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

TO-220 Plastic

CSD18503KCS

Tube

50

Tube

Package

•

DC-DC Conversion

•

Secondary Side Synchronous Rectifier

ABSOLUTE MAXIMUM RATINGS

•

Motor Control

TA = 25°C

VALUE

UNIT

VDS

Drain to Source Voltage

40

V

DESCRIPTION

VGS

Gate to Source Voltage

±20

V

The NexFET™ power MOSFET has been designed

Continuous Drain Current (Package limited),

100

to minimize losses in power conversion applications.

TC = 25°C

Continuous Drain Current (Silicon limited),

ID

130

A

TC = 25°C

Continuous Drain Current (Silicon limited),

83

TC = 100°C

IDM

Pulsed Drain Current (1)

155

A

PD

Power Dissipation

143

W

TJ,

Operating Junction and Storage

–55 to 150

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

162

mJ

ID = 57A, L = 0.1mH, RG = 25Ω

(1) Pulse duration

≤300μs, duty cycle ≤2%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

类似零件编号 - CSD18503KCS

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	CSD18503KCS	321Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD18503KCS	1Mb / 13P	CSD18503KCS 40V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024
Texas Instruments	CSD18503KCS.B	1Mb / 13P	CSD18503KCS 40V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024

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类似说明 - CSD18503KCS

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