CSD18503KCS

SLPS368 – SEPTEMBER 2012

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

40

V

Drain to Source Leakage Current

1

μA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

1.5

1.9

2.3

V

5.4

6.8

m

Ω

Drain to Source On Resistance

3.6

4.5

m

Ω

Transconductance

98

S

Dynamic Characteristics

Input Capacitance

2500

3150

pF

Output Capacitance

480

600

pF

Reverse Transfer Capacitance

12

16

pF

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (4.5V)

15

18

nC

Gate Charge Total (10V)

30

36

nC

Gate Charge Gate to Drain

4.6

nC

Gate Charge Gate to Source

7.7

nC

Gate Charge at Vth

4.7

nC

Output Charge

30

nC

Turn On Delay Time

5.7

ns

Rise Time

5.3

ns

Turn Off Delay Time

14

ns

Fall Time

6.8

ns

Diode Characteristics

Diode Forward Voltage

0.8

1

V

Reverse Recovery Charge

60

nC

di/dt = 300A/

μs

Reverse Recovery Time

37

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.9

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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