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MAT01N 数据表(PDF) 7 Page - Analog Devices |
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MAT01N 数据表(HTML) 7 Page - Analog Devices |
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7 / 8 page ![]() MAT01 –7– REV. A APPLICATION NOTES Application of reverse bias voltages to the emitter-base junctions in excess of ratings (5 V) may result in degradation of hFE and hFE matching characteristics. Circuit designs should be checked to ensure that reverse bias voltages above 5 V cannot be applied during such transient conditions as at circuit turn-on and turn-off. Stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can prevent realization of the predicted drift performance. Both input terminals should be maintained at the same temperature, preferably close to the tem- perature of the device’s package. TYPICAL APPLICATIONS Figure 12. Precision Reference Figure 13. Basic Digital Thermometer Readout in Degrees Kelvin ( °K) Figure 14. Precision Operational Amplifiers Figure 15. Digital Thermometer with Readout in °C |
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