REV. A

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a

Matched Monolithic

Dual Transistor

MAT01

FEATURES

V typ, 100

V max

V/ C max

Low Noise Voltage: 0.23

V p-p—0.1 Hz to 10 Hz

High Breakdown: 45 V min

Available in Die Form

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive

Silicon Nitride “Triple-Passivation” process provides excellent

stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40

µV, tem-

perature drift of 0.15

µV/°C, and h

10 nA. The high gain at low collector current makes the

MAT01 ideal for use in low power, low level input stages.

PIN CONNECTION

TO-78

(H Suffix)

NOTE: Substrate is connected to case.

BURN-IN CIRCUIT

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Tel: 617/329-4700

World Wide Web Site: http://www.analog.com

Fax: 617/326-8703

© Analog Devices, Inc., 1997