REV. C

TMP35/TMP36/TMP37

–3–

ABSOLUTE MAXIMUM RATINGS

1, 2, 3

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Shutdown Pin . . . . . . . . . . . . . . GND

Output Pin . . . . . . . . . . . . . . . . . . . . . . GND

Operating Temperature Range . . . . . . . . . . –55

°C to +150°C

Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 175

°C

Storage Temperature Range . . . . . . . . . . . . –65

°C to +160°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300

°C

NOTES

nent damage to the device. This is a stress rating only; functional operation at or

above this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

tected units from high energy electrostatic fields. Keep units in conductive foam

or packaging at all times until ready to use. Use proper antistatic handling

procedures.

Package Type

JA

JC

Unit

TO-92 (T9 Suffix)

162

120

°C/W

SOIC-8 (S Suffix)

158

43

°C/W

SOT-23 (RT Suffix)

300

180

°C/W

θ

ORDERING GUIDE

Accuracy

Linear

at 25 C

Operating

Package

Model

( C max)

Temperature Range

TMP35FT9

±2.0

10

°C to 125°C

TO-92

TMP35GT9

±3.0

10

°C to 125°C

TO-92

TMP35FS

±2.0

10

°C to 125°C

RN-8

TMP35GS

±3.0

10

°C to 125°C

RN-8

TMP35GRT

2

±3.0

10

°C to 125°C

RT-5

TMP36FT9

±2.0

–40

°C to +125°C

TO-92

TMP36GT9

±3.0

–40

°C to +125°C

TO-92

TMP36FS

±2.0

–40

°C to +125°C

RN-8

TMP36GS

±3.0

–40

°C to +125°C

RN-8

TMP36GRT

2

±3.0

–40

°C to +125°C

RT-5

TMP37FT9

±2.0

5

°C to 100°C

TO-92

TMP37GT9

±3.0

5

°C to 100°C

TO-92

TMP37FS

±2.0

5

°C to 100°C

RN-8

TMP37GS

±3.0

5

°C to 100°C

RN-8

TMP37GRT

2

±3.0

5

°C to 100°C

RT-5

NOTES

TO = Plastic.

FUNCTIONAL DESCRIPTION

An equivalent circuit for the TMP3x family of micropower,

centigrade temperature sensors is shown in Figure 2. At the

heart of the temperature sensor is a band gap core, which is

comprised of transistors Q1 and Q2, biased by Q3 to approxi-

mately 8

µA. The band gap core operates both Q1 and Q2 at the

same collector current level; however, since the emitter area of

by the following relationship:

∆V

BE

=V

T

× ln









SHDN

3X

25 A

2X

Q2

1X

R1

R2

R3

7.5 A

Q3

2X

GND

Q4

Q1

10X

6X

Figure 2. Temperature Sensor Simplified

Equivalent Circuit

Resistors R1 and R2 are used to scale this result to produce the

output voltage transfer characteristic of each temperature sensor

between the three temperature sensors’ output characteristics.

Table I. TMP3x Output Characteristics

Offset

Output Voltage

Output Voltage

Sensor

Voltage (V)

Scaling (mV/ C)

@ 25 C (mV)

TMP35

0

10

250

TMP36

0.5

10

750

TMP37

0

20

500

The output voltage of the temperature sensor is available at the

emitter of Q4, which buffers the band gap core and provides

load current drive. Q4’s current gain, working with the available

base current drive from the previous stage, sets the short-circuit

current limit of these devices to 250

µA.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although

the TMP35/TMP36/TMP37 features proprietary ESD protection circuitry, permanent damage

may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE