MMDF2P01HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

12

—

—

17

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 12 Vdc, VGS = 0 Vdc)

(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

0.7

—

1.0

3.0

1.1

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

0.16

0.2

0.180

0.220

Ohm

Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)

gFS

3.0

4.75

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

530

740

pF

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

410

570

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

177

250

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(on)

—

21

45

ns

Rise Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

tr

—

156

315

Turn–Off Delay Time

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(off)

—

38

75

Fall Time

G = 6.0 Ω)

tf

—

68

135

Turn–On Delay Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

16

35

Rise Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

—

44

90

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

68

135

Fall Time

G = 6.0 Ω)

tf

—

54

110

Gate Charge

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

QT

—

9.3

13

nC

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

Q1

—

0.8

—

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

Q2

—

4.0

—

Q3

—

3.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.69

1.2

2.0

—

Vdc

Reverse Recovery Time

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

48

—

ns

Reverse Recovery Time

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

48

—

ns

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

23

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

25

—

Reverse Recovery Stored Charge

QRR

—

0.05

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.