MMDF2P01HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.4

0.8

0

1

2

4

TJ = 25°C

1.2

4.5 V

3

1.6

2

3.1 V

VGS = 8 V

1.5 V

2.5 V

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1

1.2

1.4

2.8

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

2

4

8

0.1

0.20

0.25

0.30

0.35

0

0.8

1.6

4

0.10

0.15

0.20

0.30

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

4

12

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 25°C

VGS = 0 V

TJ = 25°C

ID = 1 A

VGS = 2.7 V

1.6

1.8

2

6

4.5 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

100

8

0

1

2

4

3

25

°C

100

°C

TJ = – 55°C

0.25

2.4

2.2

2.4

2.6

0.15

3.2

10

1.7 V

0.2

0.6

1

1.4

1.8

1.9 V

2.1 V

2.3 V

2.7 V

0

0.5

1

2

1.5

VGS = 4.5 V

ID = 2 A