STTH5L04DEE datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH5L04DEE

2/8

Doc ID 023261 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.85 x IF(AV) + 0.04 x IF

(RMS)

Table 2.

Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 120 °C, = 0.5

IFSM

Surge non repetitive forward current tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +150

°C

Maximum operating junction temperature

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

4.5

°C/W

Rth(j-a)

Junction to ambient on printed circuit board (with recommended

footprint dimension, copper thickness = 35 µm)

250

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 5 ms,  < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

-2.5

µA

Tj = 125 °C

2.5

µA

(2)

Pulse test: tp = 380 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 5A

1.05

1.25

Tj = 150 °C

0.85

1.05

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IRM

Reverse recovery

current

Tj = 125 °C

IF = 5A, VR = 320 V,

dlF/dt = -200 A/µs

-8

Sfactor

Softness factor

0.7

trr

Reverse recovery time

Tj = 25 °C

IF = 1A, VR = 30 V,

dlF/dt = -50 A/µs

IF = 1A, VR = 30 V,

dlF/dt = -100 A/µs

-35

tfr

Forward recovery time

Tj = 25 °C

IF = 5 A, VFR = 1.2 V

dlF/dt = 100 A/µs

110

VFP

Forward recovery

voltage

Tj = 25 °C

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