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STTH5L04DEE 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH5L04DEE
功能描述  Turbo 2 ultrafast recovery diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH5L04DEE 数据表(HTML) 4 Page - STMicroelectronics

  STTH5L04DEE Datasheet HTML 1Page - STMicroelectronics STTH5L04DEE Datasheet HTML 2Page - STMicroelectronics STTH5L04DEE Datasheet HTML 3Page - STMicroelectronics STTH5L04DEE Datasheet HTML 4Page - STMicroelectronics STTH5L04DEE Datasheet HTML 5Page - STMicroelectronics STTH5L04DEE Datasheet HTML 6Page - STMicroelectronics STTH5L04DEE Datasheet HTML 7Page - STMicroelectronics STTH5L04DEE Datasheet HTML 8Page - STMicroelectronics STTH5L04DEE Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
STTH5L04DEE
4/8
Doc ID 023261 Rev 1
Figure 7.
Reverse recovery softness factor
versus dlF/dt (typical values)
Figure 8.
Relative variation of dynamic
parameters versus junction
temperature
S
FACTOR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=320 V
Tj=125 °C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
IF=IF(AV)
VR=320 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
Tj(°C)
Figure 9.
Transient peak forward voltage
versus dlF/dt (typical values)
Figure 10.
Forward recovery time versus dlF/dt
(typical values)
V
FP(V)
0
1
2
3
4
5
6
7
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
Tj=125 °C
dIF/dt(A/µs)
t
f (ns)
r
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VFR=1.2V
Tj=125 °C
dIF/dt(A/µs)
Figure 11.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab
C(pF)
100
1
10
1
10
100
1000
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
Rth(j-a)(°C/W)
0
50
100
150
200
250
01
2345
678
9
10
PowerFLAT (3.3x3.3)
SCu(cm²)
epoxy printed board FR4, copper thickness=35µm



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