STTH4R06DEE datasheet(3/9 Pages) STMICROELECTRONICS

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STTH4R06DEE

Characteristics

Doc ID 023262 Rev 1

3/8

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Forward voltage drop versus

forward current

PF(AV)(W)

234

IF(AV)(A)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ =tp/T

IFM(A)

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Tj=150 °C

(Maximum values)

Tj=150 °C

(Typical values)

Tj=25 °C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dlF/dt (typical values)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

100

150

200

250

300

350

400

450

500

IRM(A)

IF=IF(AV)

VR=400 V

Tj=125 °C

dIF/dt(A/µs)

Figure 5.

Reverse recovery time versus dlF/dt

(typical values)

Figure 6.

Reverse recovery charges versus

dlF/dt (typical values)

120

160

200

240

100

150

200

250

300

350

400

450

500

R (ns)

dIF/dt(A/µs)

IF=IF(AV)

VR=400 V

Tj=125 °C

120

160

200

240

280

320

100

150

200

250

300

350

400

450

500

RR(nC)

IF=IF(AV)

VR=400 V

Tj=125 °C

dIF/dt(A/µs)

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