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STTH4R06DEE 数据表(PDF) 4 Page - STMicroelectronics |
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STTH4R06DEE 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STTH4R06DEE 4/8 Doc ID 023262 Rev 1 Figure 7. Reverse recovery softness factor versus dlF/dt (typical values) Figure 8. Relative variation of dynamic parameters versus junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350 400 450 500 S FACTOR IF=IF(AV) VR=400 V Tj=125 °C dIF/dt(A/µs) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 25 50 75 100 125 IF=IF(AV) VR=400 V Reference: Tj=125 °C IRM SFACTOR QRR Tj(°C) Figure 9. Transient peak forward voltage versus dlF/dt (typical values) Figure 10. Forward recovery time versus dlF/dt (typical values) 0 2 4 6 8 10 12 0 50 100 150 200 250 300 350 400 450 500 V FP(V) IF=IF(AV) Tj=125 °C dIF/dt(A/µs) t f (ns) r 0 10 20 30 40 50 60 70 80 90 100 110 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VFR=2V Tj=125 °C dIF/dt(A/µs) Figure 11. Junction capacitance versus reverse voltage applied (typical values) Figure 12. Thermal resistance junction to ambient versus copper surface under tab C(pF) 1 10 100 1 10 100 1000 F=1 MHz VOSC=30 mVRMS Tj=25 °C VR(V) Rth(j-a)(°C/W) 0 50 100 150 200 250 01 2345 678 9 10 PowerFLAT (3.3x3.3) SCu(cm²) epoxy printed board FR4, copper thickness=35µm |
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