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X02 数据表(PDF) 3 Page - STMicroelectronics |
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X02 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() X02 Characteristics Doc ID 7480 Rev 4 3/11 Table 5. Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads (DC) TO-92 Max. 60 °C/W Rth(j-t) Junction to tab (DC) SOT-223 25 Rth(j-t) Junction to tab (DC) SMBflat-3L 14 Rth(j-a) Junction to ambient (DC) TO-92 150 S = 5 cm2 SOT-223 60 SMBflat-3L 75 Figure 1. Maximum average power dissipation versus average on-state current (full cycle) Figure 2. Average and DC on-state current versus tab (SOT-223, SMBflat-3L) or lead (TO-92) temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 P(W) α = 180° I (A) T(AV) 360° α 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 D.C. (SMBflat-3L) D.C. (TO-92) D.C. (SOT-223) α = 180° (SMBflat-3L) α = 180° (SOT-223) α = 180° (TO-92) T or T (°C) lead tab I (A) T(AV) Figure 3. Average and DC on-state current versus ambient temperature Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 I (A) T(AV) D.C. (SMBflat-3L) D.C. (TO-92) D.C. (SOT-223) α = 180° (SMBflat-3L) α = 180° (SOT-223) α = 180° (TO-92) T (°C) amb K=[Z /R th(j-a) th(j-a)] 0.01 0.10 1.00 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 TO-92 SOT-223 t (s) p SMBflat-3L |
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