ACE4440B datasheet(2/6 Pages) ACE

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ACE4440B

N-Channel Enhancement Mode MOSFET

VER 1.2

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown

voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=60V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

1.4

Gate leakage current

IGSS

VGS=±20V, VDS=0V

100

Drain-source on-state

resistance

RDS(ON)

VGS=10V, ID=5A

mΩ

VGS=4.5V, ID=4A

Forward transconductance

gFS

VDS=15V, ID=5.3A

Diode forward voltage

VSD

ISD=1A, VGS=0V

0.75

Maximum body-diode

continuous current

3.1

Switching

Total gate charge

VGS=5V, VDS=30V,

ID=5.3A

11.26

14.64

Gate-source charge

Qgs

3.77

4.9

Gate-drain charge

Qgd

4.08

5.3

Turn-on delay time

td(on)

VGS=4.5V, VDS=30V

RL=6.8Ω, RGEN=1Ω

18.12

36.24

Turn-on rise time

17.68

35.36

Turn-off delay time

td(off)

Turn-off fall time

8.92

17.84

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=30V,

f=1.0MHz

1062.8

Output capacitance

Coss

157.26

Reverse transfer capacitance

Crss

56.56

Note :

1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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