ACE4440B datasheet(1/6 Pages) ACE

部件名	ACE4440B

功能描述	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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ACE4440B

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

 V

DS=60V

 I

D=6A (VGS=10V)

 R

DS(ON)

<35

mΩ (V

GS=10V)

 R

DS(ON)

<40

mΩ (V

GS=4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)

TA=25℃

ID

6

A

TA=70℃

4.8

Drain Current (Pulsed)

IDM

30

A

Power Dissipation

TA=25℃

PD

3

W

TA=70℃

2

Operating temperature / storage temperature

TJ/TSTG -55~150 ℃

Packaging Type

SOP-8

Ordering information

ACE4440B XX + H

FM : SOP-8

Pb - free

Halogen - free

类似零件编号 - ACE4440B

制造商	部件名	数据表	功能描述
ACE Technology Co., LTD...	ACE4441B	930Kb / 6P	P-Channel Enhancement Mode Field Effect Transistor VER 1.2
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