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AP60T03AS 数据表(PDF) 2 Page - Advanced Power Electronics Corp.

部件名 AP60T03AS
功能描述  Simple Drive Requirement Low Gate Charge
PDF  4 Pages
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制造商  A-POWER [Advanced Power Electronics Corp.]
网页  http://www.a-power.com.tw
标志 A-POWER - Advanced Power Electronics Corp.

AP60T03AS 数据表(HTML) 2 Page - Advanced Power Electronics Corp.

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.026
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
2
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=175
oC)
VDS=24V ,VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=20A
-
11.6
-
nC
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8.8
-
ns
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75Ω
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135
-
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
23.3
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60T03AS/P



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