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AP60T03AS 数据表(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP60T03AS 数据表(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 4 page ![]() AP60T03AS/P Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 30 60 90 0.0 1.0 2.0 3.0 4.0 5.0 V DS , Drain-to-Source Voltage (V) T C =175 o C 10V 8.0V 6.0V 5.0V V GS =4.0V 0 25 50 75 100 125 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) T C =25 o C 10V 8.0V 6.0V 5.0V V GS =4.0V 0.4 0.8 1.2 1.6 2 -50 25 100 175 T j , Junction Temperature ( o C) I D =20A V GS =10V 0 20 40 60 80 35 79 11 V GS , Gate-to-Source Voltage (V) I D =20A T C =25 ℃ ℃ ℃ ℃ 0.1 1 10 100 0 0.5 1 1.5 V SD (V) , Source-to-Drain Voltage (V) Tj=25 o C Tj=175 o C 0.3 0.8 1.3 1.8 2.3 2.8 -50 25 100 175 T j , Junction Temperature ( o C ) |
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