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STP35N65M5 数据表(PDF) 8 Page - STMicroelectronics

部件名 STP35N65M5
功能描述  N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP35N65M5 数据表(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB/F/I/P/W35N65M5
8/22
Doc ID 15325 Rev 3
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BVDSS vs temperature
Figure 18.
Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
AM05422v1
RDS(on)
1.1
0.9
0.7
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
1.3
1.5
1.7
1.9
2.1
AM05423v1
VSD
0
20
ISD(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
TJ=150°C
TJ=25°C
AM05424v1
BVDSS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
125
AM05416v1
E
300
200
100
0
0
20
RG(
Ω)
(
μJ)
10
30
400
40
ID=15A
VGS=10V
VCL=400V
Eon
Eoff
50
150
250
350
AM05421v1



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