STP35N65M5 datasheet(3/22 Pages) STMICROELECTRONICS

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STB/F/I/P/W35N65M5

Electrical ratings

Doc ID 15325 Rev 3

3/22

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, D²PAK

TO-247, I²PAK

TO-220FP

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

27 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

17 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

108

108 (1)

PTOT

Total dissipation at TC = 25 °C

160

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

800

dv/dt (3)

ISD ≤ 27 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK TO-220FP I²PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-

case max

0.78

3.1

0.78

°C/W

Rthj-amb

Thermal resistance junction-

ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

max

°C/W

Maximum lead temperature for

soldering purpose

300

°C

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