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STM32F415VG 数据表(PDF) 82 Page - STMicroelectronics

部件名 STM32F415VG
功能描述  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM
PDF  186 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F415VG 数据表(HTML) 82 Page - STMicroelectronics

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Electrical characteristics
STM32F415xx, STM32F417xx
82/186
DocID022063 Rev 4
Table 19. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling
edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising
edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling
edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising
edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling
edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling
edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising
edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling
edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising
edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling
edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling
edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling
edge)
2.95
3.03
3.09
V
VPVDhyst(1)
PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst(1)
PDR hysteresis
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
V



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