©2013 Silicon Storage Technology, Inc.

DS70005041C

05/13

2

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP19E

Data Sheet

Product Description

SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

SST12LP19E can be easily configured for high-power applications with good power-added efficiency while

operating over the 2.4- 2.5 GHz frequency band. It typically provides 25 dB gain with 34% power-added effi-

This device has excellent linearity, typically ~3% added EVM at 19.5 dBm output power which is essential for 54

Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at

23 dBm.

SST12LP19E can also be easily configured for high-efficiency operation, typically ~2.5% added EVM at 18

dBm output power and 92 mA total power consumption for 54 Mbps 802.11g applications. High-efficiency oper-

ation is desirable in embedded applications, such as in hand-held units, where SST12LP19E can provide 25

dB gain and meet 802.11b/g/n spectrum mask at 22 dBm output power with 34% PAE.

This power amplifier also features easy board-level usage along with high-speed power-up/down control

SST12LP19E controllable by an on/off switching signal directly from the baseband chip. These features cou-

pled with low operating current make the SST12LP19E ideal for the final stage power amplification in battery-

powered 802.11b/g/n WLAN transmitter applications.

SST12LP19E has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with

dB-wise linear output voltage. The excellent on-chip power detector provides a reliable solution to board-

level power control.

The SST12LP19E is offered in 8-contact XSON, 6-contact XSON, and 6-contact X2SON packages. See Fig-

ure 3 for pin assignments and Tables 1 and 2 for pin descriptions.