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SST39SF040 数据表(PDF) 13 Page - Microchip Technology

部件名 SST39SF040
功能描述  1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
PDF  28 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

SST39SF040 数据表(HTML) 13 Page - Microchip Technology

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©2013 Silicon Storage Technology, Inc.
DS25022B
04/13
13
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
AC Characteristics
Table 11: Read Cycle Timing Parameters VDD = 4.5-5.5V
Symbol Parameter
SST39SF010A/020A/040-55
SST39SF010A/020A/040-70
Units
Min
Max
Min
Max
TRC
Read Cycle Time
55
70
ns
TCE
Chip Enable Access Time
55
70
ns
TAA
Address Access Time
55
70
ns
TOE
Output Enable Access Time
35
35
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
25
ns
TOHZ1
OE# High to High-Z Output
20
25
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.4 25022
Table 12: Program/Erase Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
40
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TSCE
Chip-Erase
100
ms
T12.1 25022



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