©2013 Silicon Storage Technology, Inc.

DS25022B

04/13

Data Sheet

www.microchip.com

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 55 ns

– 70 ns

• Latched Address and Data

• Automatic Write Timing

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• All devices are RoHS compliant

The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose

Flash (MPF) devices manufactured with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program

or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts

for x8 memories