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STB18N65M5 数据表(PDF) 7 Page - STMicroelectronics

部件名 STB18N65M5
功能描述  N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB18N65M5 数据表(HTML) 7 Page - STMicroelectronics

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STB18N65M5, STD18N65M5
Electrical characteristics
Doc ID 023446 Rev 1
7/18
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on-resistance
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
Figure 12.
Normalized gate threshold voltage
vs temperature
Figure 13.
Normalized on-resistance vs
temperature
VGS
6
4
2
0
0
5
Qg(nC)
(V)
20
8
10
15
10
VDD=520V
ID=7.5A
300
200
100
0
400
500
VDS
(V)
VDS
25
30
12
AM12474v1
RDS(on)
0.19
0.18
0.17
0.16
0
6
ID(A)
(
Ω)
4
8
0.2
0.21
0.22
VGS=10V
0.23
0.24
2
10
12
14
AM12475v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
AM12476v1
Eoss
2
1
0
0
VDS(V)
(µJ)
400
3
200
4
5
600
6
AM12484v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID = 250 µA
VDS = VGS
AM12471v1
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.5
1.9
2.1
VGS= 10V
ID= 7.5 A
AM12483v1



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