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STB18N65M5 数据表(PDF) 1 Page - STMicroelectronics |
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STB18N65M5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. July 2012 Doc ID 023446 Rev 1 1/18 18 STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Order codes VDSS @ TJmax RDS(on) max ID STB18N65M5 710 V < 0.22 Ω 15 A STD18N65M5 D2PAK 1 3 2 TAB 1 3 TAB 2 DPAK Table 1. Device summary Order codes Marking Package Packaging STB18N65M5 18N65M5 D2PAK Tape and reel STD18N65M5 DPAK www.st.com |
类似零件编号 - STB18N65M5 |
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类似说明 - STB18N65M5 |
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