NST489AMT1G datasheet(1/4 Pages) ONSEMI

部件名	NST489AMT1G

功能描述	High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications

PDF	4 Pages

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

1 / 4 page

 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 8

1

Publication Order Number:

NST489AMT1/D

NST489AMT1,

NSVT489AMT1G

High Current Surface Mount

NPN Silicon Low VCE(sat)

Switching Transistor for

Load Management in

Portable Applications

Features

 AEC−Q101 Qualified and PPAP Capable

 NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 Pb−Free Packages are Available*

MAXIMUM RATINGS (TA = 25C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

30

V

Collector-Base Voltage

VCBO

50

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current − Continuous

IC

2.0

A

Collector Current − Peak

ICM

3.0

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25C

Derate above 25C

PD (Note 1)

535

4.3

mW

mW/C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

234

C/W

Total Device Dissipation

TA = 25C

Derate above 25C

PD (Note 2)

1.180

9.4

W

mW/C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

106

C/W

Thermal Resistance,

Junction−to−Lead #1

RqJL (Note 1)

RqJL (Note 2)

110

50

C/W

Total Device Dissipation

(Single Pulse < 10 s)

PDsingle

(Notes 2 and 3)

1.75

W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 with 1 oz and 3.9 mm2 of copper area.

2. FR−4 with 1 oz and 645 mm2 of copper area.

3. Refer to Figure 8.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TSOP−6

CASE 318G

STYLE 6

DEVICE MARKING

COLLECTOR

1, 2, 5, 6

3

BASE

4

EMITTER

30 VOLTS, 3.0 AMPS

NPN TRANSISTOR

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

N2 M G

G

Device

Package

Shipping†

ORDERING INFORMATION

NST489AMT1

TSSOP−6

ORDERING INFORMATION

3,000 /

Tape & Reel

NST489AMT1G

TSSOP−6

(Pb−Free)

3,000 /

Tape & Reel

N2 = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation may vary depending upon

manufacturing location.

(Note: Microdot may be in either location)

NSVT489AMT1G

TSSOP−6

(Pb−Free)

3,000 /

Tape & Reel

类似零件编号 - NST489AMT1G

制造商	部件名	数据表	功能描述
ON Semiconductor	NST489AMT1G	65Kb / 4P	High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications April, 2006 ??Rev. 7

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