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NST489AMT1G 数据表(PDF) 2 Page - ON Semiconductor

部件名 NST489AMT1G
功能描述  High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications
PDF  4 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NST489AMT1G 数据表(HTML) 2 Page - ON Semiconductor

  NST489AMT1G Datasheet HTML 1Page - ON Semiconductor NST489AMT1G Datasheet HTML 2Page - ON Semiconductor NST489AMT1G Datasheet HTML 3Page - ON Semiconductor NST489AMT1G Datasheet HTML 4Page - ON Semiconductor  
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NST489AMT1, NSVT489AMT1G
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ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CEO
30
−
−
V
Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
50
−
−
V
Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current (VCB = 30 V, IE = 0)
ICBO
−
−
0.1
mA
Collector−Emitter Cutoff Current (VCES = 30 V)
ICES
−
−
0.1
mA
Emitter Cutoff Current (VEB = 4.0 V)
IEBO
−
−
0.1
mA
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
hFE
300
300
200
−
500
−
−
900
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
VCE(sat)
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A)
VBE(sat)
−
−
1.1
V
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
−
1.1
V
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz
fT
200
300
−
MHz
Output Capacitance (f = 1.0 MHz)
Cobo
−
−
15
pF
4. Pulsed Condition: Pulse Width  300 msec, Duty Cycle  2%.
Figure 1. VCE (sat) versus Ib
0.001
0.2
0.01
0.1
1.0
0
0.1
Ib (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 2. VCE (sat) versus Ic
0.001
2
0.01
0.1
1.0
0
0.1
Ic (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
IC = 2 A
IC = 1 A
IC = 500 mA
IC = 100 mA
Ic/Ib = 100
Ic/Ib = 10
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
0.001
2
0.01
0.1
1.2
0
Ic (A)
0.2
0.4
0.6
0.8
1
1.0
+125C
+25C
−55C
VCE = 5 V
0.001
2
0.01
0.1
800
0
100
Ic (A)
200
300
400
500
600
700
1
+125C
+25C
−55C
VCE = 5 V



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