IXTY32P05T datasheet(4/6 Pages) IXYS

部件名	IXTY32P05T

功能描述	TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PDF	6 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

4 / 6 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY32P05T IXTA32P05T

IXTP32P05T

Fig. 7. Input Admittance

-35

-30

-25

-20

-15

-10

-5

-6.5

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

-3.0

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

-36

-32

-28

-24

-20

-16

-12

-8

-4

ID - Amperes

TJ = - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

QG - NanoCoulombs

VDS = - 25V

I D = -16A

I G = -1mA

Fig. 11. Capacitance

100

1,000

10,000

-40

-35

-30

-25

-20

-15

-10

-5

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

100

1,000

100

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

100ms

IXTY32P05T 数据表(PDF) 4 Page - IXYS Corporation

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