IXTY32P05T datasheet(1/6 Pages) IXYS

部件名	IXTY32P05T

功能描述	TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PDF	6 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 50

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 50

V

GSS

Continuous

±15

V

GSM

Transient

±25

V

I

D25

T

C = 25°C

- 32

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

-110

A

I

A

T

C = 25°C

- 32

A

E

AS

T

C = 25°C

200

mJ

P

D

T

C = 25°C83

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13/10

Nm/lb.in.

Weight

TO-252

0.35

g

TO-263

2.50

g

TO-220

3.00

g

DS99967C(01/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 50

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.5

- 4.5

V

I

GSS

V

GS = ± 15V, VDS = 0V

±50 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 3

μA

T

J = 125°C

-100

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

39 m

Ω

TrenchPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTY32P05T

IXTA32P05T

IXTP32P05T

V

DSS

= - 50V

I

D25

= - 32A

R

DS(on) ≤

≤≤≤≤

39m

Ω

Features

International Standard Packages

Avalanche Rated

Extended FBSOA

Fast Intrinsic Diode

Low R

DS(ON) and QG

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

TO-252 (IXTY)

G

S

D (Tab)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXTA)

G

S

D (Tab)

G

D S

TO-220AB (IXTP)

D (Tab)

G

D

S

类似零件编号 - IXTY32P05T

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	IXTY32P05T	307Kb / 2P	isc P-Channel MOSFET Transistor

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