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STM32F050C4 数据表(PDF) 59 Page - STMicroelectronics |
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STM32F050C4 数据表(HTML) 59 Page - STMicroelectronics |
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59 / 97 page ![]() STM32F050xx Electrical characteristics Doc ID 023683 Rev 1 59/97 Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 36 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The event used to wake up the device depends from the current operating mode: ● Stop or sleep mode: the wakeup event is WFE. ● The wakeup pin used in sleep, stop and standby modes is PA0. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 15: General operating conditions. Table 35. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz tsu(LSI) (2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDDA(LSI) (2) LSI oscillator power consumption - 0.75 1.2 µA Table 36. Low-power mode wakeup timings Symbol Parameter Conditions Typ @VDD Max Unit = 2.0 V = 2.4 V = 2.7 V = 3 V = 3.3 V tWUSTOP Wakeup from Stop mode Regulator in run mode 4.24.2 4.24.2 4.2 5 µs Regulator in low power mode 8.05 7.05 6.6 6.27 6.05 9 tWUSTANDBY Wakeup from Standby mode 60.35 55.6 53.5 52.02 50.96 tWUSLEEP Wakeup from Sleep mode 1.11.1 1.11.1 1.1 |
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