MMA-283136-R5

28-31GHz 4W MMIC Power Amplifier

Data Sheet

October, 2012

MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538

510-651-6700

FAX

MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012

Page 8 of 13

Applications

The MMA283136 MMIC power amplifier is designed for use as a power stage amplifier in microwave

transmitters. It is ideally suited for 28 to 31GHz band V-sat transmitter applications requiring excellent saturated

output power and linearity performance. This amplifier is provided as a 5x5mm QFN package, and the packaged

amplifier is fully compatible with industry standard high volume surface mount PCB assembly processes.

Biasing and Operation

The recommended bias conditions for best performance for high power applications the MMA283136 are VDD =

6.0V, Idsq = 2000mA. Performance improvements are possible depending on applications. For high linearity

requirement at higher output power up to 27dBm/tone, recommended bias conditions are Vdd=5V,

Idsq=3000mA. The drain bias voltage range is 5 to 6V and the quiescent drain current biasing range is 1200mA

to 3000mA. A single DC gate supply connected to Vg will bias all the amplifier stages. Muting can be

accomplished by setting Vg to the pinch-off voltage (Vp=-1.8V). The gate voltage (Vg) should be applied prior to

the drain voltages (Vd1, Vd2, Vd3, and Vd4) during power up and removed after the drain voltages during power

down. The RF input and output ports are DC decoupled internally. Typical DC supply connection with bi-passing

capacitors for the MMA283136 is shown in following pages.

Assembly Techniques

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage,

handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are

critical factors in successful GaAs MMIC performance and reliability.