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STN4NF20L 数据表(PDF) 3 Page - STMicroelectronics |
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STN4NF20L 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STN4NF20L Electrical ratings Doc ID 17445 Rev 2 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 20 V ID Drain current continuous TC = 25 °C 1 A ID Drain current continuous TC = 100 °C 0.63 A IDM (1) 1. Pulse width limited by safe operating area. Drain current pulsed 4 A PTOT (2) 2. This value is rated according to Rthj-amb ≤ 10 sec. Total dissipation at TC = 25 °C 3.3 W dv/dt (3) 3. Isd ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS. Peak diode recovery voltage slope 20 V/ns Tj Tstg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec). Thermal resistance junction to ambient 38 °C/W Rthj-amb (2) 2. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec). 62.5 °C/W Table 4. Thermal data Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive(1) 1. Pulse width limited by TJMAX. 1A EAS Single pulse avalanche energy (2) 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 90 mJ |
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