STN4NF20L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN4NF20L

4/12

Doc ID 17445 Rev 2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V, VDS=0

± 100

VGS(th)

Gate threshold voltage VGS = VDS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 0.5 A

VGS = 5 V, ID = 0.5 A

1.1

1.13

1.5

1.55

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

150

Instrinsic gate

resistance

f=1 MHz open drain

5.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 1 A,

VGS = 10 V

(see Figure 13)

0.9

2.6

6.9

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(v)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 100 V, ID = 0.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12)

3.6

10.4

15.4

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