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T8T 数据表(PDF) 4 Page - STMicroelectronics |
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T8T 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics T8T 4/9 Doc ID 16192 Rev 3 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.8 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current Figure 2. On-state rms current versus case temperature P(W) 0 1 2 3 4 5 6 7 8 9 10 01234 5 678 0 1 2 3 4 5 6 7 8 9 10 01234 5 678 180° α = 180° IT(RMS)(A) IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 α = 180° TC(°C) Figure 3. On-state rms current versus ambient temperature (free air convection) Figure 4. Relative variation of thermal impedance versus pulse duration IT(RMS)(A) 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 α = 180° Ta(°C) 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 K = [Zth / Rth] TO-220AB TO-220AB Zth(j-a) Zth(j-c) Tp(s) Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on state current versus number of cycles ITM(A) 1 10 100 02 3 4 5 1 10 100 02 3 4 5 1 VTM(V) Tjmax: Vto = 0.87 V Rd =6 0 mΩ ITSM(A) 0 10 20 30 40 50 60 70 1 10 100 0 10 20 30 40 50 60 70 1 10 100 1000 Number of cycles Repetitive Tc = 97 °C Non repetitive Tj initial = 25 °C One cycle t = 20 ms |
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