T8T

Characteristics

Doc ID 16192 Rev 3

5/9

Figure 7.

Non repetitive surge peak on-state

current for a sinusoidal

Figure 8.

Relative variation of gate trigger

current and gate trigger voltage

versus junction temperature

ITSM(A), I²t (A²s)

10

100

1000

0.01

0.10

1.00

10.00

10

100

1000

0.01

0.10

1.00

10.00

dl /dt limitation: 50 A / µs

I²t

ITSM

Tj initial = 25 °C

tp(ms)

pulse with width t <10 ms, and corresponding value of I²t

p

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

50

75

100

125

Tj(°C)

IGT Q3

IGT Q1-Q2

IGT Q1-Q2-Q3

typical values

Figure 9.

Relative variation of holding

current and latching current versus

junction temperature

Figure 10.

Relative variation of static dV/dt

immunity versus junction

temperature

IH,[Tj] / IH,IL[Tj = 25 °C]

IL

0.0

0.5

1.0

1.5

2.0

-50

-25

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

-50

-25

0

25

50

75

100

125

Tj(°C)

IL

IH

typical values

dV / dt [Tj] /

[Tj = 125 °C]

dV / dt

0

1

2

3

4

5

6

7

25

50

75

100

125

VD =VR = 402 V

Tj(°C)

Figure 11.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 12.

Relative variation of leakage

current versus junction

temperature

(dl / dt)c [Tj] /

[Tj = 125 °C]

(dl / dt)c

0

1

2

3

4

5

6

25

50

75

100

125

Tj(°C)

IDRM/IRRM [Tj;VDRM /VRRM] / IDRM/IRRM

[Tj = 125 °C; 600 V]

1.0E-03

1.0E-02

1.0E-01

1.0E+00

25

50

75

100

125

Tj(°C)

VDRM =VRRM = 600 V

VDRM =VRRM = 400 V

VDRM =VRRM = 200 V

for different values of blocking voltage