T830-8FP

Characteristics

Doc ID 023366 Rev 1

3/9

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

Max.

1.55

V

(1)

Threshold voltage

Max.

0.85

V

(1)

Dynamic resistance

Max.

40

m



Max.

5µA

1

mA

1.

For both polarities of A2 referenced to A1.

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case (AC)

3.5

°C/W

Junction to ambient

60

°C/W

Figure 1.

Maximum power dissipation versus

rms on-state current

Figure 2.

On-state rms current versus case

temperature

P(W)

0

2

4

6

8

10

02468

α =180 °

I

(A)

T(RMS)

180°

I

(A)

T(RMS)

0

2

4

6

8

10

0

25

50

75

100

125

α =180°

T (°C)

C

Figure 3.

On-state rms current versus

ambient temperature

(free air convection)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

I

(A)

T(RMS)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

T (°C)

a

α = 180°

K = [Zth / Rth]

1.0E-02

1.0E-01

1.0E+00

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05

tp (s)

Z

th(j-a)

Z

th(j-c)