T830-8FP datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

T830-8FP

4/9

Doc ID 023366 Rev 1

Figure 5.

Relative variation of gate trigger

current versus junction

temperature (typical values)

Figure 6.

Relative variation of gate trigger

voltage versus junction

temperature (typical values)

I [T ] / I [T = 25 °C]

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

IQ1

IQ3

IQ2

T (°C)

V [T ] / V [T = 25 °C]

0.0

0.5

1.0

1.5

-50

-25

100

125

T (°C)

Figure 7.

Relative variation of holding and

latching current versus junction

temperature (typical values)

Figure 8.

Surge peak on-state current versus

number of cycles

I , [T ] / I , I [T = 25 °C]

0.0

0.4

0.8

1.2

1.6

-50

-25

100

125

T (°C)

(A)

TSM

100

1000

Number of cycles

One cycle

t = 20 ms

Non repetitive

T initial = 25 °C

Repetitive

T = 95 °C

Figure 9.

Non repetitive surge peak on-state

current and corresponding value of

I2T

Figure 10.

On-state characteristics (maximum

values)

A), I²t (A²s)

TSM(

100

1000

10000

0.01

0.10

1.00

10.00

t (ms)

sinusoidal pulse with width t <10 ms

dl/dt limitation: 100 A / µs

I²t

TSM

T initial = 25 °C

I (A)

100

012

345

Tj=25°C

Tj=125°C

(V)

T max:

V = 0.85 V

R = 40 m

T830-8FP 数据表(PDF) 4 Page - STMicroelectronics

T830-8FP 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

T830-8FP 数据表(PDF) 4 Page - STMicroelectronics

T830-8FP 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载