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STF21N65M5 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF21N65M5
功能描述  N-channel 650 V, 0.150 Ω, 17 A MDmesh™V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF21N65M5 数据表(HTML) 5 Page - STMicroelectronics

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STB/F/I/P/W21N65M5
Electrical characteristics
Doc ID 15427 Rev 4
5/22
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 11 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 21)
(see
Figure 24)
-
37
10
12
24
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
17
68
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 17 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
-
294
4
28
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see
Figure 21)
-
340
5
29
ns
µC
A



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