STP3NK90Z datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STD3NK90Z, STP3NK90Z, STP3NK90ZFP

Electrical ratings

Doc ID 9193 Rev 2

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK, TO-220

TO-220FP

VDS

Drain-source voltage

900

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

3 (1)

Limited by maximum junction temperature

Drain current (continuous) at TC = 100°C

1.89

1.89 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

12 (1)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.72

0.2

W/°C

ESD

Gate-source human body model (R=1,5

Ω, C=100 pF)

4kV

dv/dt (3)

ISD < 3A, di/dt < 200A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from

all three

leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

DPAK

TO-220

TO-220FP

Unit

Rthj-case Thermal resistance junction-case max

1.38

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAR, VDD= 50V)

180

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