STD3NK90Z, STP3NK90Z, STP3NK90ZFP

Electrical characteristics

Doc ID 9193 Rev 2

5/20

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

3

12

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(Figure 22)

-

510

2.2

8.7

ns

µC

A

Table 9.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

30

-

-

V