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STI6N62K3 数据表(PDF) 8 Page - STMicroelectronics

部件名 STI6N62K3
功能描述  N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STI6N62K3 数据表(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3
8/19
Doc ID 14676 Rev 4
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on-resistance vs
temperature
Figure 16.
Normalized BVDSS vs temperature
Figure 17.
Source-drain diode forward
characteristics
Figure 18.
Maximum avalanche energy vs
temperature
VGS(th)
1.00
0.90
0.80
0.70
-75
TJ(°C)
(norm)
-25
1.10
75
25
125
ID=50µA
AM09061v1
RDS(on)
2.0
1.5
1.0
0.5
-75
TJ(°C)
(norm)
-25
75
25
125
0.0
2.5
ID=2.8A
VGS=10V
AM09062v1
BVDSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.90
0.95
1.00
1.05
1.10
ID=1mA
AM09060v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0
0.2
0.4
0.6
0.8
1.0
TJ=25°C
TJ=150°C
TJ=-50°C
6
AM09063v1
EAS
0
40
TJ(°C)
(mJ)
20
100
60
80
0
20
40
60
80
120 140
100
120
140
160
ID=5.5 A
VDD=50 V
AM09064v1



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