STI6N62K3 datasheet(3/19 Pages) STMICROELECTRONICS

3 / 19 page

STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3

Electrical ratings

Doc ID 14676 Rev 4

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

I²PAKFP

I²PAK

TO-220

IPAK

VDS

Drain-source voltage

620

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

5.5 (1)

Limited by maximum junction temperature.

5.5

Drain current (continuous) at TC = 100 °C

3 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

22 (1)

PTOT

Total dissipation at TC = 25 °C

IAR

(3)

Pulse width limited by Tj max.

Avalanche current, repetitive or not-repetitive

5.5

EAS

(4)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Single pulse avalanche energy

140

ESD

Gate-source human body model

(R=1.5 k

Ω, C=100 pF)

2.5

dv/dt (5)

ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220FP

I²PAKFP

I²PAK

TO-220

IPAK

Unit

Rthj-case

Thermal resistance junction-case max.

4.17

1.39

°C/W

Rthj-amb

Thermal resistance junction-ambient max.

62.5

100

°C/W

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