STB155N3LH6 datasheet(1/18 Pages) STMICROELECTRONICS

部件名	STB155N3LH6

功能描述	N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

PDF	18 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 18 page

September 2011

Doc ID 17893 Rev 3

1/18

18

STB155N3LH6

STD155N3LH6

N-channel 30 V, 2.4 m

Ω , 80 A, D²PAK, DPAK

STripFET™VI DeepGATE™ Power MOSFET

Features

■ 100% avalanche tested

■ Logic level drive

Applications

■ Switching applications

■ Automotive

Description

These devices are N-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on)

max

ID

(1)

1.

Current limited by package

PTOT

STB155N3LH6

30 V

3.0 m

Ω

80 A

110 W

STD155N3LH6

DPAK

D²PAK

1

3

TAB

3

1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB155N3LH6

155N3LH6

D2PAK

Tape and reel

STD155N3LH6

DPAK

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类似零件编号 - STB155N3LH6

制造商	部件名	数据表	功能描述
STMicroelectronics	STB155N3H6	949Kb / 18P	N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET 11-May-2011

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