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STB155N3LH6 数据表(PDF) 3 Page - STMicroelectronics |
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STB155N3LH6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() STB155N3LH6, STD155N3LH6 Electrical ratings Doc ID 17893 Rev 3 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ± 20 V ID (1) 1. Limited by wire bonding. Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit D2PAK DPAK Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb (1) 1. When mounted on 1 inch2 OZ Cu board. Thermal resistance junction-pcb max 35 50 °C/W Table 4. Thermal resistance Symbol Parameter Value Unit IAV Not-repetitive avalanche current 40 A EAS (1) 1. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Single pulse avalanche energy 525 mJ |
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