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IXTY44N10T 数据表(PDF) 2 Page - IXYS Corporation

部件名 IXTY44N10T
功能描述  TrenchMVTM Power MOSFET
PDF  5 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTY44N10T 数据表(HTML) 2 Page - IXYS Corporation

  IXTY44N10T Datasheet HTML 1Page - IXYS Corporation IXTY44N10T Datasheet HTML 2Page - IXYS Corporation IXTY44N10T Datasheet HTML 3Page - IXYS Corporation IXTY44N10T Datasheet HTML 4Page - IXYS Corporation IXTY44N10T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP44N10T
IXTY44N10T
Symbol
Test Conditions
Characteristic Values
(T
J = 25° C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 0.5 ID25, Note 1
13
21
S
C
iss
1262
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
190
pF
C
rss
43
pF
t
d(on)
Resistive Switching Times
21
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 10 A
47
ns
t
d(off)
R
G = 18 Ω (External)
36
ns
t
f
32
ns
Q
g(on)
33
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 10 A
10
nC
Q
gd
11
nC
R
thJC
1.15
°C/W
R
thCS
TO-220
0.5
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25° C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
44
A
I
SM
Repetitive
140
A
V
SD
I
F = 25 A, VGS = 0 V, Note 1
1.1
V
t
rr
I
F = 25 A, -di/dt = 100 A/µs
100
ns
V
R = 50 V, VGS = 0 V
Notes:
1. Pulse test: t ≤300 µs, duty cycle
d
≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be
5 mm or less from the package body.
TO-252 (IXTY) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38 0.086
0.094
A1
0.89 1.14 0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89 0.025
0.035
b1
0.76 1.14 0.030
0.045
b2
5.21 5.46 0.205
0.215
c
0.46 0.58 0.018
0.023
c1
0.46 0.58 0.018
0.023
D
5.97 6.22 0.235
0.245
D1
4.32 5.21 0.170
0.205
E
6.35 6.73 0.250
0.265
E1
4.32 5.21 0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42 0.370
0.410
L
0.51 1.02 0.020
0.040
L1
0.64 1.02 0.025
0.040
L2
0.89 1.27 0.035
0.050
L3
2.54 2.92 0.100
0.115
1 Anode
2 NC
3 Anode
4 Cathode
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2 7,071,537
PRELIMINARYTECHNICAL
INFORMATION
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.



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