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IXTY44N10T 数据表(PDF) 1 Page - IXYS Corporation |
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IXTY44N10T 数据表(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() © 2006 IXYS CORPORATION All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 ° C to 175° C 100 V V DGR T J = 25 ° C to 175° C; R GS = 1 MΩ 100 V V GSM Transient ± 30 V I D25 T C = 25° C44 A I L Package Current Limit, RMS TO-252A 25 A I DM T C = 25° C, pulse width limited by TJM 140 A I AR T C = 25° C10 A E AS T C = 25° C 250 mJ dv/dt I S ≤I DM, di/dt ≤100 A/µs, VDD ≤VDSS 3 V/ns T J ≤175° C, R G = 18 Ω P D T C = 25° C 130 W T J -55 ... +175 °C T JM 175 °C T stg -40 ... +175 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C T SOLD Plastic body for 10 seconds 260 °C M d Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-220 3 g TO-252 0.8 g Symbol Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0 V, ID = 250 µA85 V V GS(th) V DS = VGS, ID = 25 µA 2.5 4.5 V I GSS V GS = ± 20 V, VDS = 0 V ± 100 nA I DSS V DS = VDSS 1 µA V GS = 0 V T J = 150° C 100 µA R DS(on) V GS = 10 V, ID = 22 A, Notes 1, 2 22 30 m Ω TrenchMVTM Power MOSFET Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated IXTP44N10T IXTY44N10T V DSS = 100 V I D25 =44 A R DS(on) ≤ ≤≤≤≤ 30 m Ω Ω Ω Ω Ω DS99646 (11/06) TO-220 (IXTP) D S G D (TAB) G = Gate D = Drain S = Source TAB = Drain TO-252 AA (IXTY) D (TAB) S G Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier |
类似零件编号 - IXTY44N10T |
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类似说明 - IXTY44N10T |
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