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MRF49XA-I/T 数据表(PDF) 79 Page - Microchip Technology |
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MRF49XA-I/T 数据表(HTML) 79 Page - Microchip Technology |
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79 / 102 page ![]() © 2009-2011 Microchip Technology Inc. Preliminary DS70590C-page 79 MRF49XA 5.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) Temperature under bias ........................................................................................................................... -40°C to +85°C Storage temperature .............................................................................................................................. -55°C to +125°C Lead temperature (soldering, max 10s) ............................................................................................................... +260°C Voltage on VDD with respect to VSS ............................................................................................................... -0.3V to 6V Voltage on any combined digital and analog pin with respect to VSS (except RFP, RFN and VDD) ........................................................................................................... -0.3V to (VDD + 0.3V) Voltage on open-collector outputs (RFP, RFN)(1)........................................................................... -0.5V to (VDD + 1.5V) Input current into pin (except VDD and VSS).......................................................................................... -25 mA to 25 mA Electrostatic discharge with human body model .................................................................................................... 1000V Note: At maximum, voltage on RFP and RFN cannot be higher than 7V. † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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