数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STP9NM60N 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP9NM60N
功能描述  N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP9NM60N 数据表(HTML) 3 Page - STMicroelectronics

  STP9NM60N Datasheet HTML 1Page - STMicroelectronics STP9NM60N Datasheet HTML 2Page - STMicroelectronics STP9NM60N Datasheet HTML 3Page - STMicroelectronics STP9NM60N Datasheet HTML 4Page - STMicroelectronics STP9NM60N Datasheet HTML 5Page - STMicroelectronics STP9NM60N Datasheet HTML 6Page - STMicroelectronics STP9NM60N Datasheet HTML 7Page - STMicroelectronics STP9NM60N Datasheet HTML 8Page - STMicroelectronics STP9NM60N Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 16 page
background image
STD9NM60N, STF9NM60N, STP9NM60N
Electrical ratings
Doc ID 18063 Rev 1
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
6.5
6.5 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
4
4 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
26
26 (1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 6.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220 TO-220FP
Rthj-case
Thermal resistance junction-case max
1.79
5
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb minimum
footprint
50
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
115
mJ



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com