STP9NM60N datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STD9NM60N, STF9NM60N, STP9NM60N

4/16

Doc ID 18063 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating, @125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 3.25 A

0.63

0.745

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

452

1.45

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when V

increases from 0 to 80% VDS.

Equivalent output

catacitance

VGS = 0, VDS = 0 to 480 V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 6.5 A,

VGS = 10 V,

(see Figure 18)

17.4

9.7

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-4.8

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