LF to 4 GHz

High Linearity Y-Mixer

ADL5350

Rev. 0

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FEATURES

Broadband radio frequency (RF), intermediate frequency (IF),

and local oscillator (LO) ports

Conversion loss: 6.8 dB

Noise figure: 6.5 dB

High input IP3: 25 dBm

High input P1dB: 19 dBm

Low LO drive level

Single-ended design: no need for baluns

Single-supply operation: 3 V @ 19 mA

Miniature, 2 mm × 3 mm, 8-lead LFCSP

RoHS compliant

APPLICATIONS

Cellular base stations

Point-to-point radio links

RF instrumentation

FUNCTIONAL BLOCK DIAGRAM

RF

INPUT OR

OUTPUT

IF

OUTPUT OR

INPUT

3V

RF

IF

GND

GND

LO

LO

INPUT

VPOS

ADL5350

Figure 1.

GENERAL DESCRIPTION

The ADL5350 is a high linearity, up-and-down converting

mixer capable of operating over a broad input frequency range.

It is well suited for demanding cellular base station mixer designs

that require high sensitivity and effective blocker immunity. Based

on a GaAs pHEMT, single-ended mixer architecture, the ADL5350

provides excellent input linearity and low noise figure without

the need for a high power level LO drive.

In 850 MHz/900 MHz receive applications, the ADL5350

provides a typical conversion loss of only 6.7 dB. The input IP3

is typically greater than 25 dBm, with an input compression

point of 19 dBm. The integrated LO amplifier allows a low LO

drive level, typically only 4 dBm for most applications.

The high input linearity of the ADL5350 makes the device an

excellent mixer for communications systems that require high

blocker immunity, such as GSM 850 MHz/900 MHz and

800 MHz CDMA2000. At 2 GHz, a slightly greater supply

current is required to obtain similar performance.

The single-ended broadband RF/IF port allows the device to be

customized for a desired band of operation using simple external

filter networks. The LO-to-RF isolation is based on the LO

rejection of the RF port filter network. Greater isolation can be

achieved by using higher order filter networks, as described in

the Applications Information section.

The ADL5350 is fabricated on a GaAs pHEMT, high performance

IC process. The ADL5350 is available in a 2 mm × 3 mm, 8-lead

LFCSP. It operates over a −40°C to +85°C temperature range.

An evaluation board is also available.