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ADL5350ACPZ-R7 数据表(PDF) 19 Page - Analog Devices

部件名 ADL5350ACPZ-R7
功能描述  LF to 4 GHz High Linearity Y-Mixer
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL5350ACPZ-R7 数据表(HTML) 19 Page - Analog Devices

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ADL5350
Rev. 0 | Page 19 of 24
APPLICATIONS INFORMATION
LOW FREQUENCY APPLICATIONS
The ADL5350 can be used in low frequency applications. The
circuit in Figure 59 is designed for an RF of 136 MHz to 176 MHz
and an IF of 45 MHz using a high-side LO. The series and
parallel resonant circuits are tuned for 154 MHz, which is
the geometric mean of the desired RF frequencies. The
performance of this circuit is depicted in Figure 60.
RF/IF
GND2
LOIN
NC
RF/IF
NC
VPOS
100nH
100nF
4.7µF
27pF
36nH
10nF
27pF
LO
1nF
36nH
RF
3V
IF
GND1
ADL5350
12
3
4
87
6
5
ALL INDUCTORS
ARE 0603CS
SERIES FROM
COILCRAFT
Figure 59. 136 MHz to 176 MHz RF Downconversion Schematic
40
35
30
25
20
15
10
12
10
8
6
4
2
0
136
176
166
156
146
RF FREQUENCY (MHz)
IIP3
IP1dB
LOSS
Figure 60. Measured Performance for Circuit in Figure 59
Using High-Side LO Injection and 45 MHz IF
HIGH FREQUENCY APPLICATIONS
The ADL5350 can be used at extended frequencies with
some careful attention to board and component parasitics.
Figure 61 is an example of a 2560 MHz to 2660 MHz down-
conversion using a low-side LO. The performance of this circuit
is depicted in Figure 62. Note that the inductor and capacitor
values are very small, especially for the RF and IF ports. Above
2.5 GHz, it is necessary to consider alternate solutions to avoid
unreasonably small inductor and capacitor values.
RF/IF
GND2
LOIN
NC
RF/IF
NC
VPOS
2.1nH
100pF
4.7µF
0.7pF
1.5nH
1nF
1pF
0.67nH
RF
3V
IF
GND1
ADL5350
12
3
4
87
6
5
3.0nH
LO
100pF
ALL INDUCTORS
ARE 0302CS
SERIES FROM
COILCRAFT
Figure 61. 2560 MHz to 2660 MHz RF Downconversion Schematic
35
30
25
20
15
10
5
0
14
13
12
11
10
9
8
7
2560
2660
2580
2600
2620
2640
RF FREQUENCY (MHz)
IIP3
IP1dB
LOSS
Figure 62. Measured Performance for Circuit in Figure 61
Using Low-Side LO Injection and 374 MHz IF
The typical networks used for cellular applications below
2.6 GHz use band-select and band-reject networks on the RF
and IF ports. At higher RF frequencies, these networks are not
easily realized by using lumped element components. As a result, it
is necessary to consider alternate filter network topologies to
allow more reasonable values for inductors and capacitors.



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